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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV37 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) *Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS *Designed for use in automotive ignition circuits. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 600 UNIT V Collector Current- Continuous Collector Current-Peak Base Current - Continuous w w scs .i w 400 8 V V 15 A 30 4 100 150 -65~150 A A W .cn mi e PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP BUV37 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; IB= 0; L= 15mH B 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7 A; IB= 70mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 150mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10 A; IB= 150mA B 2.7 V ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain w w scs .i w IC= 15A; VCE= 5V .cn mi e 20 40 mA isc Websitewww.iscsemi.cn |
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