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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD581 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) *Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 5A APPLICATIONS *Designed for 40~60W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i MAX 150 100 6 7 12 2 UNIT V V .cn mi e V A ICM Collector Current-Peak A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC 60 W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD581 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-1 Classifications B 60-120 C 100-200 w w. w sem isc IC= 1A; VCE= 5V IC= 5A; VCE= 5V .cn i 60 25 10 A 200 isc Websitewww.iscsemi.cn |
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