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 JMnic
Product Specification
Silicon NPN Power Transistors
2SC3868
DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulse) Base current (DC) Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ae ae Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 2 4 0.5 2 W UNIT V V V A A A
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3868
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 30 MHz MIN 400 1.0 1.5 100 100 |I |I TYP. MAX UNIT V V V A A
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT
Switching times ton ts tf Turn-on time Storage time Fall time IC=1A ;IB=0.2A;IB2=-0.4A VCC=150V 0.7 2.0 0..3 |I |I |I s s s
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3868
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3


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