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SMS7401 Elektronische Bauelemente -2.8A, -30V,RDS(ON) 115m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMS7401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. A L 3 Top View SOT-23 Dim A B C D D Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 S 1 2 B G H C J K G J K L S V Features * -30V/-2.8A,RDS(ON)=115m [ @VGS=-10V * -30V/-2.5A,RDS(ON)=125m [ @VGS=-4.5V * -30V/-1.5A,RDS(ON)=170m [ @VGS=-2.5V * -30V/-1.0A,RDS(ON)=240m [ @VGS=-1.8V * Super High Density Cell Design For Extremely Low RDS(ON) * Exceptional On-Resistance And Max. DC Current Capability H Drain Gate Source All Dimension in mm D Applications * * * * * * * DC/DC Converter Power Management in Notebook DSC LCD Display Inverter Portable Equipment Battery Powered System Load Switch G S *week code: A~Z(1~26),a~z(27~52) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@TJ =150 oC Drain-Source Diode Forward Current Pulsed Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS o ID@TA= 25 C Ratings -30 12 -2.8 -2.1 -1.4 -8 o Unit V V A A A W o ID@TA= 70 C IS IDM PD@TA=25 C PD@TA=70 C Tj, Tstg o o 0.33 0.21 -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient Symbol Rthj-a Ratings 105 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SMS7401 Elektronische Bauelemente -2.8A, -30V,RDS(ON) 115m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage o Symbol BVDSS VSD VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ Unit V V V nA uA uA Test Condition VGS=0V, ID=-250 uA Forward On Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current -0.8 _ _ _ _ -1.2 ID=-1.2 A,VGS=0V. VDS=VGS, ID=-250 uA VGS=12V,VDS=0V VDS=-24V,VGS=0V VDS=-24V,VGS=0V,Tj=85 oC VGS=-10V, ID=-2.8A -0.4 _ _ _ _ -1 100 -1 -5 0.115 0.135 0.17 0.24 _ 0.105 0.125 0.155 0.21 _ Static Drain-Source On-Resistance RDS(ON) _ _ _ [ VGS=-4.5V, ID=-2.5A VGS=-2.5V, ID=-1.5A VGS=-1.8V, ID=-1A On-State Drain Current Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Chagre Gate-Drain Chagre Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance ID(ON) Td(ON) Tr Td(Off) Tf Qg Qgs Qgd Ciss Coss Crss Gfs -4 _ _ _ _ _ _ _ _ _ _ A VDS=- 5V,VGS=-4.5V 6 3.9 40 15 5.8 0.8 1.5 380 55 40 4 _ _ _ _ _ _ _ _ _ _ VDD=-15V ID=-1A nS VGEN = -10V RG=3 [ RL =15 [ nC VGS=-4.5V VDS=-15V ID=-2A pF VGS=0V VDS=-15V f=1.0MHz _ _ S VDS=-10V, ID=-2.8A http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SMS7401 Elektronische Bauelemente -2.8A, -30V,RDS(ON) 115m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 SMS7401 Elektronische Bauelemente -2.8A, -30V,RDS(ON) 115m[ P-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 SMS7401 Elektronische Bauelemente -2.8A, -30V,RDS(ON) 115m[ P-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 |
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