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| JMnic Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 20 150 -50~150 ae ae Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -5 -2 -5 1.75 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-2A; IB=-0.2A IC=-1A ; VCE=-5V VCB=-20V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-5V 40 35 8 MIN -50 TYP. 2SB514 SYMBOL VCEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V -1.0 -1.5 -0.1 -1.0 320 V V mA mA MHz hFE-1Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB514 Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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