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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2720AX DESCRIPTION *With TO-3PML package *High voltage *High speed switching APPLICATIONS *For use in horizontal deflection circuits of high resolution monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE 1700 825 10 25 10 14 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2720AX SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=5.5A ;IB=1.38A 1.0 V VBEsat Base-emitter saturation voltage IC=5.5A ;IB=1.38A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 1.0 1.0 2.0 1.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=0.1A ; VCE=5V 22 hFE-2 DC current gain IC=5.5A ; VCE=1V 4 5.5 7.5 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2720AX Fig.2 Outline dimensions 3 |
Price & Availability of BU2720AX
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