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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB747 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SD812 APPLICATIONS *High power amplifier applications. *Suitable for 15~20W home stereo output amplifier and voltage regulator. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w scs .i w VALUE -80 -80 -5 -5 -8 UNIT .cn mi e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB747 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -2.0 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -50 A IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 A hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain hFE-3 DC Current Gain COB Collector Output Capacitance fT Current-Gain--Bandwidth Product hFE-2 Classifications R 40-80 Q 60-120 w w P 100-200 w. sem isc IC= -1A; VCE= -5V IC= -3A; VCE= -5V IE= 0; VCB= -10V; f= 1MHz IC= -0.5A; VCE= -5V .cn i 40 20 190 7 20 200 pF MHz isc Websitewww.iscsemi.cn 2 |
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