 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type HEXFET Power MOSFET KRF7389 IC IC Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Drain Current Ta = 70 Pulsed Drain Current *1 Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25 @Ta= 70 Gate-to-Source Voltage Single Pulse Avalanche Energy VGS EAS IAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 EAR dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM IS PD N-Channel 30 7.3 5.9 30 2.5 2.5 1.6 20 82 4.0 0.20 3.8 P-Channel -30 -5.3 -4.2 -30 -2.5 Unit V A W V 140 -2.8 mJ A mJ -2.2 V/ns -55 to + 150 50 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 4.0A, di/dt -2.8A, di/dt 74A/ s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 1500A/ *3 Surface mounted on FR-4 board, t 10sec. www.kexin.com.cn 1 SMD Type KRF7389 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = 250 A ID = 1mA,Reference to 25 ID = 1mA,Reference to 25 VGS = 10V, ID = 5.8A*1 VGS = 4.5V, ID = 4.7A*1 VGS = -10V, ID = -4.9A*1 VGS = -4.5V, ID = -3.6A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 15V, ID = 5.8A*1 VDS = -15V, ID = -4.9A*1 VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55 VDS = -24V, VGS = 0V, TJ = 55 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -4.9A,VDS = -15V,VGS = -10V N-Channel VDD = 15V,ID = 1.A,RG = 6.0 RD=15 P-Channel VDD = -15V,ID = -1.8A,RG = 6.0 RD=15 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Channel VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 30 -30 Typ Max Unit V 0.022 0.022 0.023 0.029 0.032 0.046 0.042 0.058 .076 0.098 1 -1.0 14 7.7 1.0 -1.0 25 -25 100 100 22 23 2.6 3.8 6.4 5.9 8.1 13 8.9 13 26 34 17 32 650 710 320 380 130 180 2.5 -2.5 30 -30 33 34 3.9 5.7 9.6 8.9 12 19 13 20 39 51 26 48 TJ RDS(on) RDS(on) VGS(th) gfs V/ V S Drain-to-Source Leakage Current IDSS A Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Body Diode) IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VGS = 20V nA N-Channel ID = 5.8A,VDS = 15V,VGS =10V nC ns pF A Body Diode) *2 2 www.kexin.com.cn SMD Type KRF7389 Electrical Characteristics Ta = 25 Parameter Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Symbol VSD trr Qrr Testconditons TJ = 25 , IS = 1.7A, VGS = 0V*1 TJ = 25 , IS = -1.7A, VGS = 0V*1 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ P-Channel TJ = 25 , IF =-1.7A,di/dt = -100A/ s*1 N-Ch P-Ch N-Ch P-Ch N-Ch s*1 P-Ch Min Typ 0.78 -0.78 45 44 58 42 Max 1.0 -1.0 68 66 87 63 IC IC Unit V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. www.kexin.com.cn 3 |
Price & Availability of KRF7389
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |