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| SMD Type Silicon Schottky Barrier Diode HSB276S Diodes Features High forward current, Low capacitance. HSB276S which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r R e v e r s e v o lt a g e A v e r a g e r e c t if ie d c u r r e n t J u n c t io n t e m p e r a t u r e S to ra g e te m p e ra tu re S ym bol VR IO Tj T s tg V a lu e 3 30 125 -5 5 to + 1 2 5 U n it V mA Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability (Note 1) Note 1. Failure criterion ; IR 100 A at VR =0.5 V Symbol VF IR IF C AC Conditions IF =1.0 mA VR =0.5 V VF =0.5 V VR = 0.5 V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200pF, Both forward and reverse direction 1 pulse. 30 35 0.90 0.10 Min 3 50 Typ Max Unit V A mA pF pF V Marking Marking C2 www.kexin.com.cn 1 |
Price & Availability of HSB276S
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