 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type Silicon Schottky Barrier Diode HSB276AS Diodes Features High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e R e v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VRRM VR IO Tj T s tg V a lu e 5 3 30 125 -5 5 to + 1 2 5 U n it V V mA Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability (Note 1) Note 1. Failure criterion ; IR 100 A at VR =0.5 V Symbol VF IR IF C AC Conditions IF =1.0 mA VR =0.5 V VF =0.5 V VR = 0.5 V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200pF, R= 0 Both forward and 30 35 0.90 0.10 Min 3 50 Typ Max Unit V A mA pF pF V reverse direction 1 pulse. Marking Marking E8 www.kexin.com.cn 1 |
Price & Availability of HSB276AS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |