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AOT1N60 1.3A, 600V N-Channel MOSFET
formerly engineering part number AOT9600
General Description
The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Top View TO-220
Features
VDS (V) = 700V @ 150C ID = 1.3A RDS(ON) < 9 (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
D
G
G D S S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current C Avalanche Current
C C G
Maximum 600 30 1.3 0.8 4 1.0 15 30 5 41.7 0.33 -50 to 150 300
Units V V A A mJ mJ V/ns W W/ oC C C
TC=25C TC=100C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RJA RCS RJC Typical 55 2
Repetitive avalanche energy
Single pulsed avalanche energy Peak diode recovery dv/dt TC=25C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink A Maximum Junction-to-Case D,F
A
Maximum 65 0.5 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT1N60
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS BVDSS /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Conditions ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=150C ID=250A, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=0.65A VDS=40V, ID=0.65A 3 4.1 7.5 0.9 0.65 1 1 4 100 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 11 1.4 2.8 130 14.5 1.8 3.5 6.1 VGS=10V, VDS=480V, ID=1A 1.3 3.1 10 VGS=10V, VDS=300V, ID=1A, RG=25 IF=1.3A,dI/dt=100A/s,VDS=100V 6.7 20 11.5 114 0.63 160 17.5 2.2 5.3 8 2 4 12 8 25 15 137 0.76 Min 600 700 0.6 1 10 100 5 9 Typ Max Units V V V/ C A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C
o
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/s,VDS=100V
A: The value of R JA is measured with the device in a still air environment with T A =25C. AOT1N60 AOTF1N60 B. The power dissipation PD is based on TJ(MAX)=150C in a TO220 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. L=60mH, IAS=1A, VDD=150V, RG=10, Starting TJ=25C 15 Rev0: July 2008
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2.0 10V 10 6.5V 6V ID(A) VDS=40V -55C
1.5
ID (A)
1.0
1 25C
125C
0.5
VGS=5.5V
0.0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 14
0.1 2 4 6 8 10
VGS(Volts) Figure 2: Transfer Characteristics 2.5 Normalized On-Resistance 2.0 1.5 1.0 0.5 0.0 -100 AOT1N60 -50 0 50 AOTF1N60 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00
13 12 RDS(ON) () 11 10 9 8 7 0.0 0.5 1.0 1.5 2.0 2.5 VGS=10V
VGS=10V ID=0.5A
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2
Normalized BVDSS
1.1 IS (A)
15
1.0E-01 30
125C
1
1.0E-02 1.0E-03
0.9 1.0E-04 0.8 -100 1.0E-05 -50 0 50 100
o
25C
150
200
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Temperature ( C) Figure 5: Break Down vs. Junction Temperature
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 VDS=480 ID=1A Capacitance (pF) 100 1000 Ciss
12
VGS (Volts)
9
6
10 Crss 1
Coss
3
0 0 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 2 8
0
10 VDS (Volts) Figure 8: Capacitance Characteristics
1
100
10.0
1.4
10s
1.2 Current rating ID(A) 1.0
ID (Amps)
RDS(ON) limited 10ms 0.1s DC
100s
1.0 0.8 0.6 0.4 0.2
1ms
0.1
TJ(Max)=150C TC=25C
0.0 1 10 VDS (Volts)
100
1000
0.0 0 25 50 75 100 125 150 TCASE (C) Figure 10: Current De-rating (Note B)
Figure 9: Maximum Forward Biased Safe Operating Area for AOT1N60 (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=3C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
15 30
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1
PD Ton 1 T 10 100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT1N60 (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT1N60
Gate Charge Test Circuit & Waveform
Vgs
Qg
+
VD C
10V
DUT
+
VDC
Vds
Qgs
Q gd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
R L
Vds
Vds
Vgs
DU T
+
VD C
90%
Vdd
Rg Vgs
Vgs
t d(o n) tr t on t d(off) t off tf
10%
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
EAR 1/2 LI =
2 AR
BVDSS
Id
Vds
Vgs
Rg
DU T
Vgs
+
VDC
Vdd
-
Id
I AR
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
Qrr = - Idt
DUT
Vgs
Vds -
Isd
L
Isd
IF
Vgs Ig
+
VD C
dI/dt
IRM
trr
Vdd
-
Vdd
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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