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MMBT7002K
N-Channel Enhancement Mode Field Effect Transistor
Features * Low on resistance RDS(ON) * Low gate threshold voltage * Low input capacitance * ESD protected up to 2KV
Drain
Gate
Source
1.Gate 2.Source 3.Drain SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulse Width 10 s) Total Power Dissipation Operating and Storage Temperature Range
Symbol VDSS VGSS ID IDM Ptot TJ, Ts
Value 60 20 300 800 350 - 55 to + 150
Unit V V mA mA mW
O
C
Characteristics at Ta = 25 OC Parameter Drain Source Breakdown Voltage at ID = 10 A Zero Gate Voltage Drain Current at VDS = 60 V Gate-Source Leakage Current at VGS = 20 V Gate Threshold Voltage at VDS = 10 V, ID = 250 A Static Drain-Source On-Resistance at VGS = 10 V, ID = 500 mA at VGS = 5 V, ID = 50 mA Forward Transconductance at VDS = 10 V, ID = 200 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz
Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) gfs Ciss Coss Crss
Min. 60 1 80 -
Max. 1 10 2.5 2 3 50 25 5
Unit V A A V mS pF pF pF
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated: 04/04/2008
MMBT7002K
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated: 04/04/2008

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