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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1345 DESCRIPTION *With TO-247 package *Complement to type 2SD2062 *Low collector saturation voltage APPLICATIONS *For power drvier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -7 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-50A; IE=0 IE=-50A; IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A ; VCE=-10V 60 MIN -80 -100 -5 2SB1345 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V -2.0 -2.5 -10 -10 320 12 V V A A MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1345 Fig.2 Outline dimensions 3 |
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