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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB992 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) *Collector Power Dissipation: PC= 40W@ TC= 25 *Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ IC= -4A *Complement to Type 2SD1362 APPLICATIONS *High current switching applications. *Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w w scs .i w VALUE -100 -80 -5 -7 -1 1.5 W 40 150 -55~150 V V V A A UNIT .cn mi e Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25 Collector Power Dissipation @TC=25 PC TJ Tstg Junction Temperature Storage Temperature isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB992 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.5 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.4 V A A Collector Cutoff Current VCB= -100V ; IE= 0 VEB= -5V; IC= 0 -5 Emitter Cutoff Current -5 hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product Switching Times ton tstg tf Turn-on Time w ww scs .i IC= -4A; VCE= -1V IE= 0; VCB= -10V; ftest= 1MHz IC= -1A; VCE= -4V .cn mi e 70 30 240 250 pF 10 MHz 0.4 VCC= -30V, RL= 10, IB1= -IB2= -0.3A, s s s Storage Time 2.5 Fall Time 0.5 hFE-1 Classifications O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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