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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB965
DESCRIPTION *With TO-3PFa package *Complement to type 2SD1288 APPLICATIONS *For use in low frequency and power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
*
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -7 70 150 -55~150 UNIT V V V A W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB965
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-120
V
VCEsat
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
B
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-4A ;IB=-0.4A
B
-2.0
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-50
A
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
A
hFE -1
DC current gain
IC=-1A ; VCE=-5V
60
320
hFE -2
DC current gain
IC=-4A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
150
pF
fT
Transition frequency
IC=-1A ; VCE=-5V
75
MHz
hFE-1 classifications R 60-120 Q 100-200 P 160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB965
Fig.2 Outline dimensions (unindicated tolerance:0.30mm)
3


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