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DC COMPONENTS CO., LTD.
R
2SB857
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier.
TO-220AB
Pinning
1 = Base 2 = Collector 3 = Emitter
.405(10.28) .380(9.66) .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC IC PD TJ TSTG
Rating -70 -50 -5 -4 -8 40 +150 -55 to +150
Unit V V V A A W
o o
.625(15.87) .570(14.48) 123
.350(8.90) .330(8.38)
.640 Typ (16.25)
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 Typ (2.54)
.024(0.60) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2%
Min -70 -50 -5 35 60 -
Typ 15
Max -1 -1 -1 320 -
Unit V V V A V V MHz
Test Conditions IC=-10A, IE=0 IC=-50mA, IB=0 IE=-10A, IC=0 VCB=-50V, IE=0 IC=-2A, IB=-0.2A IC=-1A, VCE=-4V IC=-0.1A, VCE=-4V IC=-1A, VCE=-4V IC=-500mA, VCE=-4V, f=100MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width
Classification of hFE2
Rank Range B 60~120 C 100~200 D 160~320

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Price & Availability of 2SB857

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB857C-E 2156-2SB857C-E-ND	Renesas Electronics Corporation	POWER BIPOLAR TRANSISTOR, PNP	163: USD1.85	1074

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB857	Hitachi Ltd			50

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB857	Hitachi Ltd	Bipolar Junction Transistor, PNP Type, TO-220AB	12: USD6 4: USD6.6 1: USD9	40
2SB857C	Hitachi Ltd	Bipolar Junction Transistor, PNP Type, TO-220AB		35

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB857C-E	Renesas Electronics Corporation	2SB857 - Power Bipolar Transistor, 4A, 50V, PNP '	1000: USD1.59 500: USD1.68 100: USD1.75 25: USD1.83 1: USD1.87	1074

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB857L-D-T6C-K	UTC Fire & Security	TO-126C Bipolar Transistors - BJT ROHS	5: USD0.13367 50: USD0.10829 500: USD0.08379 2500: USD0.07771 5000: USD0.07409	705

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB857	Hitachi Ltd	IN STOCK SHIP TODAY		150

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