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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION *Excellent Safe Operating Area *High DC Current Gain-hFE=15(Min)@IC = 10A *Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS *Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEX VCEO VEBO IC ICM IB IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak VALUE 100 80 60 UNIT V
2N3772
Base Current-Continuous Base Current-Peak
Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature
w
ww
scs .i
7 20 30 5 15 150 200 -65~200
.cn mi e
V V V A A A A
W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCER(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage CONDITIONS IC= 200mA ; IB= 0 MIN 60 80 70
2N3772
MAX
UNIT V V V
IC= 200mA ; VBE(off)= 1.5V; RBE=100 IC= 200mA ; RBE= 100 IC= 10A; IB= 1A IC= 20A; IB= 4A IC= 10A ; VCE= 4V
VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
1.4 4.0
V V V mA mA
Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain
w
ww
scs .i
VEB= 7V; IC=0
VCE= 50V; IB= 0
VCE= 100V; VBE(off)= 1.5V VCE= 45V; VBE(off)= 1.5V,TC=150 VCB= 100V; IE= 0
.cn mi e
15 5 0.2 2.5
2.2 10 5.0 10 5.0 5.0 60
mA mA
IC= 10A ; VCE= 4V IC= 20A ; VCE= 4V
Current-Gain--Bandwidth Product Second Breakdown Collector Current with Base Forward Biased
IC= 1A ; VCE= 4V ;ftest= 50kHz VCE= 60V,t= 1.0s,Nonrepetitive
MHz A
Is/b
isc Websitewww.iscsemi.cn
2


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Price & Availability of 2N3772
Newark

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2N3772
76AH6516		 SPC Multicomp Trans, Bipolar, Npn, 60V, 20A, To-3 Rohs Compliant: Yes |Multicomp Pro 2N3772 10000: USD1.33
5000: USD1.39
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JAN2N3772
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DigiKey

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Avnet Americas

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2N3772
2N3772		 Microchip Technology Inc Transistor GP BJT NPN 60V 20A 2-Pin TO-3 Tray - Bulk (Alt: 2N3772) 500: USD149.44
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JANTXV2N3772
JANTXV2N3772		 VPT Components Trans GP BJT NPN 60V 20A 2-Pin TO-3 Tray - Bulk (Alt: JANTXV2N3772) 1100: USD115.9305
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JANTXV2N3772
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JAN2N3772
JAN2N3772		 VPT Components JAN2N3772 - Bulk (Alt: JAN2N3772) 1400: USD89.67
700: USD91.875
140: USD94.08
70: USD97.755
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20: USD102.9
14: USD104.37
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2N3772JAN
JAN2N3772		 Microchip Technology Inc Transistor GP BJT NPN 60V 20A 2-Pin TO-3 - Bulk (Alt: JAN2N3772) 500: USD229.69
100: USD238.88
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Mouser Electronics

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494-JANTX2N3772		 Microchip Technology Inc Bipolar Transistors - BJT Power BJT 100: USD582.4
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579-JANTXV2N3772		 Microchip Technology Inc Bipolar Transistors - BJT Power BJT 50: USD728
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Microchip Technology Inc

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2N3772
2N3772		 Microchip Technology Inc Power BJT _ TO-3, Projected EOL: 2049-02-05 1: USD167.37
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RS

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2N3772G
70099648		 onsemi Transistor, Bipolar, Si, NPN, High Power, VCEO 60VDC, IC 20A, PD 150W, TO-204,hFE 5 | ON Semiconductor 2N3772G 1: USD6.51
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Onlinecomponents.com

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2N3772JANTX
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Rochester Electronics

Part # Manufacturer Description Price BuyNow  Qty.
2N3772G
 onsemi 2N3772 - Power Bipolar Transistor, 20A, 60V, NPN, TO-204AA, Metal, 2 Pin 1000: USD4.17
500: USD4.41
100: USD4.61
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TTI

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JVN1AF-12V-F
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TME

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2N3772
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2N3772
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Ameya Holding Limited

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 onsemi 100: USD9.680649
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NAC

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 Microchip Technology Inc Power BJT 1: USD170.79
100: USD157.3
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NexGen Digital

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Component Electronics, Inc

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2N3772
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Master Electronics

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