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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2727DF
DESCRIPTION *With TO-3PFa package *High voltage,high speed *Built-in damper diode APPLICATIONS *For use in horizontal deflection circuits of high resolution monitors
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 825 7.5 12 30 12 25 45 150 -65~150 UNIT V V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=5A ;IB=0.91A IC=5A;IB=0.91A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=1V IF=7A 6 5.5 MIN 825 7.5
BU2727DF
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF
TYP.
MAX
UNIT V
13.5 1.0 1.0 1.0 2.0 110
V V V mA mA
11 2.2 V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2727DF
Fig.2 Outline dimensions (unindicated tolerance:0.30mm)
3


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