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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU926 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) *Low Saturation Voltage : VCE(sat)= 1.5V (Max)@IC= 5A APPLICATIONS *Designed for use in high-voltage , high-speed , power switching in inductive circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Base-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC ICM Collector Current- Continuous 8 A Collector Current-Peak 10 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature 2 A PC 120 W TJ 150 Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.04 UNIT /W Rth j-c isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU926 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 V ICEX Collector Cutoff Current VCE= 850V; VBE= -2.5V 0.5 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA fT Current-Gain--Bandwidth Product IC= 0.2A; VCE= 10V; ftest= 1MHz 4 MHz Switching Times ton Turn-On Time 1.0 s tstg Storage Time IC= 5A ;IB1= -IB2= 1A; VCC= 250V 3.2 s tf Fall Time 0.8 s isc Websitewww.iscsemi.cn 2 |
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