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| S T U/D428S S amHop Microelectronics C orp. Mar.8,2007 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 50A R DS (ON) ( m ) T yp i 8 @ V G S = 10V 10 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D D G S G D G S S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TC=25 C a -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 40 20 50 100 20 50 -55 to 175 Unit V V A A A W C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T U/D428S E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg b Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 10A VGS =4.5V, ID= 6A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A Min Typ C Max Unit 40 1 10 1 1.7 8 10 30 26 1505 220 150 0.3 23 19 85 27 28 12.5 3 6 3 10 13 V uA uA V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =20V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 1 A VGS = 10V R GE N = 6 ohm VDS =15V, ID =10A,VGS =10V VDS =15V, ID =10A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =15V, ID = 10A VGS =10V 2 PF PF PF ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T U/D428S E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = 10A Min Typ Max Unit 0.95 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 60 V G S =4V 50 VGS=4.5 V 40 30 20 10 V G S =2.5V VGS=10V 20 T j =125 C ID, Drain C urrent(A) ID, Drain C urrent (A) 15 -55 C 10 25 C V G S =3V 5 0 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 15 F igure 2. Trans fer C haracteris tics 2.0 R DS (ON), On-R es is tance Normalized 1.8 1.6 1.4 1.2 1.0 0 V G S =10V ID=10A V G S =4.5V ID=6A 12 R DS (on) (m ) i V G S =4.5V 9 V G S =10V 6 3 1 1 12 24 36 48 60 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D428S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 30 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=10 A Is , S ource-drain current (A) 25 10.0 5.0 R DS (on) (m ) i 20 75 C 15 125 C 10 25 C 5 0 75 C 125 C 25 C 1.0 0 2 4 6 8 10 0 0.24 0.48 0.72 0.96 1.2 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D428S 2400 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =15V ID=10A 2000 C , C apacitance (pF ) 1600 1200 800 400 C rs s 0 0 5 10 15 C is s 6 C os s 20 25 30 0 5 10 15 20 25 30 35 40 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 220 S witching T ime (ns ) ) T D(off) Tr 600 100 N) (O S 100 60 10 L im T D(on) Tf ID, Drain C urrent (A) 1m 10 it s 10 DC 10 RD 0m ms s 1s 1 1 V DS =15V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate R es is tance (i ) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T U/D428S V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 13. S witching T es t C ircuit F igure 14. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 15. Normalized T hermal T rans ient Impedance C urve 6 S T U/D428S 7 S T U/D428S 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF . 0.090 82 56 6 0.024 BSC 398 0.064 33 REF . 8 S T U/D428S TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT: PACKAGE TO-252 (16 A0 6.80 0.1 B0 10.3 0.1 K0 2.50 0.1 D0 2 D1 1.5 + 0.1 -0 E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8. 0 0.1 P1 4. 0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252 Reel S UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2.2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R V 9 |
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