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SMD Type
HEXFET Power MOSFET KRF7309
IC IC
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter 10 Sec. Pulse Drain Current, VGS @ 10V Ta = 25 Continuous Drain Current VGS @ 10V Ta = 25 Continuous Drain Current VGS @ 10V Ta = 70 Pulsed Drain Current *1 Power Dissipation @Ta= 25 *3 Symbol ID ID ID IDM PD N-Channel 4.7 4.0 3.2 16 1.4 0.011 dv/dt VGS TJ, TSTG R
JA
P-Channel -3.5 -3.0 -2.4 -12
Unit
A
W W/ -6.0 V/ ns V
Linear Derating Factor (PCB Mount)*4 Peak Diode Recovery dv/dt *2 Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Amb. (PCB Mount, steady state)*4 6.9
20 -55 to + 150 90
/W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD *3 Pulse width 2.4A, di/dt -1.8A, di/dt 73A/ 90A/ s, VDD s, VDD 2%. V(BR)DSS, TJ V(BR)DSS, TJ 150 150
300 s; duty cycle
*4 When mounted on 1" square PCB (FR-4 or G-10 Material).
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SMD Type
KRF7309
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS
V(BR)DSS/
IC IC
Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 2.4A*1 VGS = 4.5V, ID = 2.0A*1 VGS = -10V, ID = -1.8A*1 VGS = -4.5V, ID = -1.5A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =15V, ID = 2.4A*1 VDS = -24V, ID = -1.8A*1 VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125 VDS = -24V, VGS = 0V, TJ = 125 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -2.2A,VDS = -16V,VGS = -4.5V N-Channel VDD = 10V,ID = 2.6A,RG = 6.0 RD = 3.8 P-Channel VDD = -10V,ID = -2.2A,RG = 6.0 RD = 4.5 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Between lead tip and center of die contact N-Channel VGS = 0V,VDS = 15V,f = 1.0MHz P-Channel VGS = 0V,VDS = -15V,f = 1.0MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
Min 30 -30
Typ
Max
Unit V
0.032 -0.037 0.050 0.080 0.10 0.16 1.0 -1.0 5.2 2.5 1.0 -1.0 25 -25 100 100 25 25 2.9 2.9 7.9 9.0 6.8 11 21 17 22 25 7.7 18 4.0 4.0 6.0 6.0 520 440 180 200 72 93
TJ
V/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage Forward Transconductance
VGS(th) gfs
V S
Drain-to-Source Leakage Current
IDSS
A
Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
VGS =
20V
nA
N-Channel ID =2.6A,VDS = 16V,VGS =4.5V
nC
ns
nH
pF
2
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SMD Type
KRF7309
Electrical Characteristics Ta = 25
Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%. Body Diode) Symbol IS ISM VSD trr Qrr ton TJ = 25 , IS = 1.8A, VGS = 0V*1 TJ = 25 , IS = -1.8A, VGS = 0V*1 N-Channel TJ = 25 , IF =2.6A,di/dt = 100A/ P-Channel TJ=25 ,IF=-2.2A,di/dt=-100A/ s*1 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) s*1 Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 47 53 56 66 Min Typ Max 1.8 -1.8 16 -12 1.0 -1.0 71 80 84 99
IC IC
Unit
A
Body Diode) *2
V ns nC
*2 Repetitive rating; pulse width limited by max. junction temperature.
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