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| SMD Type N-Channel PowerTrench MOSFET FDN5630 MOSFET Features VDS (V) = 60V RDS(ON)100 m (VGS = 10V) +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low gate charge Very fast switching 0.55 Optimized for use in high frequency DC/DC converters +0.1 1.3-0.1 RDS(ON)120 m (VGS = 6V) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-to-source voltage Drain curent -Continuous -Pulsed Power dissipation Maximum Junction-to-Ambient Junction and storage temperature range PD RJA TJ,TSTG Symbol VDS VGS ID Rating 60 20 1.7 10 0.5 250 -55 to +150 W /W Unit V V A www.kexin.com.cn 1 SMD Type N-Channel PowerTrench MOSFET FDN5630 Electrical Characteristics Ta = 25 Parameter Drain-source Breakdown voltage Breakdown Voltage Temperature Coefficient Symbol V(BR)DSS V(BR)DSS/TJ MOSFET Testconditons ID= 250 A, VGS = 0V ID = 250A, Referenced to 25 ID= 1.7A, VGS = 10V Min 60 Typ Max Unit V 63 73 127 83 1 2.4 6 1 -100 100 7 10 100 180 120 3 mV/ Static drain-source on- resistance RDS(on) ID= 1.7A, VGS = 10V Ta = 125 ID= 1.6A, VGS = 6V m Gate threshold voltage Forward Transconductance Gate-source leakage current Gate-source forward leadage Gate-source reverse leadage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Maximum Continuous Drain-Source Diode Forward Current Diode forward voltage VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tr Ciss Coss Crss IS VSD VDS = VGS, ID= 250 A VDS = 10 V, ID = 1.7 A VDS = 48 V, VGS = 0V VGS =-20V VGS =20V VDS =20V ,VGS = 10 V , ID=1.7 A V S A nA 1.6 1.2 10 20 15 28 15 nC VDD= 30 V, ID= 1 A VGS =10 V, RGEN= 6 6 15 5 ns VDS = 15 V, VGS = 0 V, f= 1MHz 400 102 21 0.42 A V pF VGS = 0 V , IS = 0.42 A 0.72 1.2 www.kexin.com.cn 2 |
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