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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV11 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 0.6V (Max.) @IC= 6A *High Switching Speed *High DC Current Gain: hFE= 20(Min.) @IC= 6A APPLICATIONS *Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL VCBO VCER VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 100 Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 250 240 250 200 7 20 25 4 150 200 -65~200 UNIT V V V V V A A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO ICEX IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 0.2A; IB= 0; L= 25mH IE= 50mA; IC= 0 IC= 6A; IB= 0.6A B BUV11 MIN 200 7 TYP. MAX UNIT V V 0.6 1.5 1.5 1.5 1.5 6.0 1.0 20 10 8 60 V V V mA mA mA IC= 12A ;IB= 1.5A IC= 12A ;IB= 1.5A VCE= 160V; IB= 0 VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC=125 VEB= 5V; IC= 0 IC= 6A ; VCE= 2V IC= 12A ; VCE= 4V IC= 1A;VCE= 15V, ftest= 4MHz MHz Switching Times ton ts tf Turn-on Time Storage Time Fall Time IC= 12A ;IB1=-IB2= 1.5A; VCC= 150V; RC= 12.5 0.8 1.8 0.4 s s s isc Websitewww.iscsemi.cn |
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