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Datasheet File OCR Text:

SMD Type
MOS Field Effect Transistors 2SJ356
SOT-89
MOSFET
Unit: mm
+0.1 1.50-0.1
Features
Low on-state resistance RDS(on)=0.95 RDS(on)=0.50 (VGS=-4V,ID=-1.0A)
+0.1 4.50-0.1 +0.1 1.80-0.1
+0.1 2.50-0.1
(VGS=-10V,ID=-1.0A)
1
+0.1 0.48-0.1
2
3
+0.1 0.80-0.1
+0.1 0.53-0.1 +0.1 0.44-0.1
+0.1 2.60-0.1
+0.1 4.00-0.1
+0.1 3.00-0.1
+0.1 0.40-0.1
1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%. Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 -20,+10 2.0 4 2.0 150 -55 to +150 Unit V V A A W
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1
SMD Type
2SJ356
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Reverse Recovery time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 16/+10V,VDS=0 -1.0 1.0 Min
MOSFET
Typ
Max -10 10
Unit A A V S
VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg QGS QGD trr Qrr IF=2.0A,VGS=0,di/dt=50A/ s VGS=-10V,ID=-2.0A,VDD=-48V,IG=-2mA VGS(on)=-10V,VDD=-25V,ID=--1A RL=255 ,RG=10 VDS=-10V,VGS=0,f=1MHZ VDS=-10V,ID=-1.0A VGS=-4V,ID=-1.0A VGS=-10V,ID=-1.0A
-1.4
-2.0
0.65 0.41 270 145 55 4.3 21 115 75 11.6 1.0 3.8 82 94
0.95 0.50 pF pF pF ns ns ns ns nC nC nC ns nC
2
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Price & Availability of 2SJ356

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SJ356(0)-T1-AY 2156-2SJ356(0)-T1-AY-ND	Rochester Electronics LLC	2SJ356 - SIGNAL DEVICE	650: USD0.46	16300
2SJ356-T1-AZ 2156-2SJ356-T1-AZ-ND	Rochester Electronics LLC	P-CHANNEL POWER MOSFET	369: USD0.81	4182
2SJ356(0)-T2-AZ 2156-2SJ356(0)-T2-AZ-ND	Rochester Electronics LLC	P-CHANNEL MOSFET	321: USD0.94	0
2SJ356(0)-T1-AZ 2156-2SJ356(0)-T1-AZ-ND	Rochester Electronics LLC	P-CHANNEL POWER MOSFET	650: USD0.46	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SJ356(0)-T1-AY	Renesas Electronics Corporation	2SJ356 - Power Field-Effect Transistor, P-Channel MOSFET '	1000: USD0.396 500: USD0.4193 100: USD0.4379 25: USD0.4566 1: USD0.4659	16300
2SJ356(0)-T1-AZ	Renesas Electronics Corporation	2SJ356 - Power Field-Effect Transistor, P-Channel MOSFET '	1000: USD0.3964 500: USD0.4198 100: USD0.4384 25: USD0.4571 1: USD0.4664	951000
2SJ356(0)-T2-AZ	Renesas Electronics Corporation	2SJ356 - Power Field-Effect Transistor, P-Channel MOSFET '	1000: USD0.8045 500: USD0.8519 100: USD0.8897 25: USD0.9276 1: USD0.9465	37000
2SJ356-T1-AZ	Renesas Electronics Corporation	2SJ356 - Power Field-Effect Transistor, P-Channel MOSFET '	1000: USD0.6983 500: USD0.7393 100: USD0.7722 25: USD0.8051 1: USD0.8215	4182

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SJ356	Guangdong Kexin Industrial Co Ltd			10000

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SJ-356C-C01	Singatron Enterprises Co			36

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