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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5664 2N5665 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER CONDITIONS 2N5664 Collector-base voltage 2N5665 VCEO VEBO IC IB PT Tj Tstg INCH Base current Collector-emitter voltage ANG 2N5664 EMIC ES Open emitter Open base Open collector OND TOR UC VALUE 250 400 200 300 6 5.0 1.0 UNIT V V 2N5665 Emitter-base voltage V A A W ae ae Collector current Total power dissipation Junction temperature Storage temperature TC=25ae 52.5 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5664 IC=10mA ; IB=0 2N5665 IE=10|I A ; IC=0 CONDITIONS SYMBOL 2N5664 2N5665 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 V V(BR)EBO Emitter-base breakdown voltage Collector-emitter saturation voltage 2N5664 2N5665 IC=3A; IB=0.3A 0.4 IC=3A; IB=0.6A IC=5A; IB=1A IC=3A; IB=0.3A 1.2 V IC=3A; IB=0.6A IC=5A; IB=1A VCE=200V;VBE(off)=1.5V 0.2 VCE=300V;VBE(off)=1.5V VCB=250V; IE=0 VCB=400V; IE=0 mA 1.5 V 1.0 V V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Base-emitter saturation voltage 2N5664 2N5665 VBEsat-1 VBEsat-2 Base-emitter saturation voltage ICES Collector cut-off current ICBO Collector cut-off current 2N5664 2N5665 2N5664 2N5665 hFE-1 DC current gain hFE-2 DC current gain INCH ANG 2N5664 2N5665 SEM E IC=0.5A ; VCE=2V OND IC TOR UC 1.0 40 25 40 120 75 mA 2N5664 IC=1A ; VCE=5V 2N5665 2N5664 25 15 IC=3A ; VCE=5V 10 IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz VCC=30V;IC=1A;IB1=-IB2=30mA 5 hFE-3 DC current gain 2N5665 hFE-4 COB ton DC current gain Output capacitance Turn-on time 2N5664 120 0.25 1.5 |I pF s toff Turn-off time 2N5665 VCC=30V;IC=1A;IB1=-IB2=50mA 2.0 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5664 2N5665 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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