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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 7 10 20 3.5 UNIT V V V A A A W ae ae Open collector TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3159 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.2 V ICBO Collector cut-off current VCB=400V ;IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 hFE-2 IN DC current gain DC current gain ANG CH MIC E SE IC=6A ; VCE=5V IC=1A ; VCE=5V OND 15 TOR UC 10 |I 80 A 10 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3159 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
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