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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO IN Collector-base voltage PARAMETER VCEO Collector- emitter voltage VEBO IC ICM Emitter-base voltage Collector current CHA ES NG 2SC2497 2SC2497A MIC E Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE UNIT V 70 50 V 60 5 1.5 3 1.2*1 V A A Collector current-peak PD Total power dissipation TC=25ae 5* 2 W Tj Tstg Junction temperature Storage temperature -55 150 +150 ae ae Note) *1: Without heat sink *2: With a 100 A 100 A 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SC2497 IC=2mA ; IB=0 2SC2497A V(BR)CBO VCEsat VBEsat ICEO ICBO IEBO hFE COB fT Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IC=1mA ;IE=0 IC=1.5A ;IB=0.15A IC=1.5A ;IB=0.15A VCE=10V; IB=0 VCB=20V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V CONDITIONS 2SC2497 2SC2497A SYMBOL MIN 50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 60 70 1.0 1.5 100 1 10 80 |I |I |I V V V A A A IN Output capacitance Transition frequency S hFE Classifications R 80-160 ANG CH 120-220 MIC E SE IE=0 ; VCB=20V,f=1MHz IE=0.5A ; VCB=5V,f=200MHz OND TOR UC 220 35 150 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2497 2SC2497A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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