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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB512 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature SEM GE Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE -60 -60 -5 -3 25 150 -55~150 ae ae UNIT V V V A W Open collector Collector power dissipation Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA ,IB=0 IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-5V IC=-0.5A ; VCE=-10V 60 MIN -60 -60 -6 TYP. 2SB512 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT MAX UNIT V V V -1.0 -1.5 -1.0 -1.0 |I |I V V A A IN Transition frequency ANG CH EMIC ES OND 3 TOR UC 320 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB512 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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