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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1382 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) *High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) *Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) *Complement to Type 2SD2082 B APPLICATIONS *Designed for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO IC Emitter-Base Voltage -6 V Collector Current-Continuous -16 A ICM Collector Current-Peak -26 A IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature -1 A PC 75 W TJ Tstg 150 Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1382 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -16mA B -1.5 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= -8A; IB= -16mA B -2.5 V A Collector Cutoff Current VCB= -120V ; IE= 0 VEB= -6V; IC= 0 -10 Emitter Cutoff Current -10 mA hFE DC Current Gain IC= -8A ; VCE= -4V 2000 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz IE= 1A ; VCE= -12V 350 pF fT Current-Gain--Bandwidth Product 50 MHz Switching Times ton tstg tf Turn-on Time VCC= -40V, RL= 5, IC= -8A; IB1= -IB2= -16mA, 0.8 s s s Storage Time 1.8 Fall Time 1.0 isc Websitewww.iscsemi.cn 2 |
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