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| Si4670DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient Ch1 6.9442 30.0404 25.8463 47.1691 Ambient Ch1 386.3454 u 57.6804 m 6.9241 m 1.1640 Ambient Ch2 6.9442 30.0404 25.8463 46.1691 Ambient Ch2 386.3454 u 57.6804 m 6.9241 m 1.1640 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot Ch1 11.6583 3.6731 8.9996 19.6690 Foot Ch1 2.2210 m 170.7109 u 180.0765 m 11.0677 m Foot Ch2 11.6583 3.6731 8.9996 19.6690 Foot Ch2 2.2210 m 170.7109 u 180.0765 m 11.0677 m Thermal Capacitance (Joules/C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 69737 Revision: 02-Oct-07 www.vishay.com 1 Si4670DY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4 Note: NA indicates not applicable Ambient Ch1 10.1112 32.1645 25.8678 41.8565 Ambient Ch1 598.9369 u 7.0199 m 77.6140 m 1.2853 Ambient Ch2 10.1112 32.1645 25.8678 41.8565 Ambient Ch2 598.9369 u 7.0199 m 77.6140 m 1.2853 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot Ch1 4.0004 16.0635 16.7291 7.2070 Foot Ch1 114.1659 u 1.6842 m 10.3273 m 172.1413 m Foot Ch2 4.0004 16.0635 16.7291 7.2070 Foot Ch2 114.1659 u 1.6842 m 10.3273 m 172.1413 m Thermal Capacitance (Joules/C) Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 69737 Revision: 02-Oct-07 Si4670DY_RC Vishay Siliconix Document Number: 69737 Revision: 02-Oct-07 www.vishay.com 3 Si4670DY_RC Vishay Siliconix www.vishay.com 4 Document Number: 69737 Revision: 02-Oct-07 |
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