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Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727DX DESCRIPTION *High Switching Speed *High Voltage *Built-in Ddamper Ddiode APPLICATIONS *Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Collector-Emitter Voltage 825 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 12 A Collector Current-Peak 30 A IB B Base Current- Continuous 12 A IBM Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature 20 A PC 45 W TJ 150 Tstg Storage Temperature Range -65~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT /W Rth j-c isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2727DX TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.91A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.91A B 1.0 1.0 2.0 22 V ICES Collector Cutoff Current VCE= 1700V; VBE= 0 VCE= 1700V; VBE= 0; TC=125 IC= 1A; VCE= 5V mA hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 5A; VCE= 1V 5.5 11 isc Websitewww.iscsemi.cn 2 |
Price & Availability of BU2727DX
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