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NJU7650 0Y031G 4A927 BJ225 CONTROLS A3422 0S5Z4T20 AL5100
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  Datasheet File OCR Text:
 SMD Type
Mos Field Effect Power Transistor 2SJ302
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low on-state resistance RDS(on) 0.1 RDS(on) 0.24 (VGS=-10V,ID=-8A)
Low Ciss Ciss=1200PF TYP.
+0.2 5.28-0.2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
(VGS=-4V,ID=-6A)
+0.2 8.7-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%. Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 -20,+10 16 64 75 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Reverse Recovery Time Reverse Recvery Charge Diode Forward Voltage Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 16V,VDS=0 -1.0 5.0 75 130 1200 VDS=-10V,VGS=0,f=1MHZ 670 290 30 VGS(on)=-10V,VDD=-30V,ID=--8A RL=3.75 ,RG=10 170 150 130 VGS=-10V,ID=-8A ID=-16V VDD=-48V IF=-16A,VGS=0,di/dt=50A/ IF=-16A,VGS=0 s 42 3 17 110 220 1 100 240 Min Typ Max -10 10 -2.0 Unit A A V s m m pF pF pF ns ns ns ns nc nc nc ns nc V
VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD trr Qrr VSD VDS=-10V,ID=-8A VGS=-10V,ID=-8A VGS=-4V,ID=-6A
5.60
1 Gate 2 Drain 3 Source
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