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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2774 DESCRIPTION With MT-200 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage E SEM NG OND IC CONDITIONS TOR UC VALUE 200 200 6 17 5 UNIT V V V A A W ae ae Open emitter Collector-emitter voltage Open base Open collector Emitter-base voltage Collector power dissipation Junction temperature Storage temperature TC=25ae 200 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IE=1mA ; IC=0 IC=5A; IB=0.5A VCB=200V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 50 MIN 200 6 2SC2774 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE Cob fT TYP. MAX UNIT V V 2.0 100 100 140 300 20 |I |I V A A pF MHz hFE classifications O Y IN 50-100 70-140 ANG CH MIC E SE DUC ON TOR 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2774 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
Price & Availability of 2SC2774
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