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TH30R06W 1505M LBN7003 P6KE18CA BGF200 CBM42 N74F182N 16160
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2774
DESCRIPTION With MT-200 package High power dissipation High current capability APPLICATIONS For audio power amplifier and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER

CHA IN
Collector current Base current
Collector-base voltage
E SEM NG
OND IC
CONDITIONS
TOR UC
VALUE 200 200 6 17 5 UNIT V V V A A W ae ae
Open emitter
Collector-emitter voltage
Open base Open collector
Emitter-base voltage
Collector power dissipation Junction temperature Storage temperature
TC=25ae
200 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IE=1mA ; IC=0 IC=5A; IB=0.5A VCB=200V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 50 MIN 200 6
2SC2774
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE Cob fT
TYP.
MAX
UNIT V V
2.0 100 100 140 300 20 |I |I
V A A
pF MHz
hFE classifications O Y
IN

50-100
70-140
ANG CH
MIC E SE
DUC ON
TOR
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2774

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions
3


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