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| New Product SI5432DC Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.020 at VGS = 4.5 V 0.025 at VGS = 2.5 V ID (A)a 6 6 10 nC Qg (Typ.) FEATURES * Halogen-free * TrenchFET(R) Power MOSFET RoHS APPLICATIONS * Load Switches for Portable Devices COMPLIANT 1206-8 ChipFET TM 1 D D D D S D D G D G Bottom View S N-Channel MOSFET Ordering Information: SI5432DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current TC = 25 C TA = 25 C TC = 25 C TC = 70 C Maximum Power Dissipation TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature)e, f TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS Limit 20 12 6a 6a 6a, b, c 6a, b, c 30 5.2 2.1b, c 6.3 4 2.5b, c 1.6b, c - 55 to 150 260 A Unit V PD TJ, Tstg W C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t5s RthJA 40 50 Maximum Junction-to-Ambienta, c, d C/W RthJF 15 20 Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited, TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 68925 S-82293-Rev. A, 22-Sep-08 www.vishay.com 1 Parameter New Product SI5432DC Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 6.7 A, dI/dt = 100 A/s, TJ = 25 C IS = 6.7 A, VGS = 0 V 0.8 20 10 10 10 TC = 25 C 5.2 30 1.2 40 20 A V ns nC ns b Symbol VDS VDS /TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Test Conditions VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS , ID = 250 A VDS = 0 V, VGS = 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 8.3 A VGS = 2.5 V, ID = 4.5 A VDS = 10 V, ID = 8.3 A Min. 20 Typ. Max. Unit V 25 - 4.0 0.6 1.5 100 1 10 30 0.016 0.020 45 1200 0.020 0.025 A A S mV/C V nA VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 8.3 A VDS = 10 V, VGS = 4.5 V, ID = 8.3 A f = 1 MHz VDD = 10 V, RL = 1.5 ID 6.7 A, VGEN = 4.5 V, Rg = 1 220 100 22 10 2.5 1.7 2.4 15 10 35 12 10 25 15 55 20 15 20 40 15 33 15 pF nC ns VDD = 10 V, RL = 1.5 ID 6.7 A, VGEN = 10 V, Rg = 1 12 25 10 Notes: a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68925 S-82293-Rev. A, 22-Sep-08 New Product SI5432DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 VGS = 5 thru 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 8 10 TC = - 55 C 18 VGS = 2 V 12 6 TC = 125 C 4 6 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 VGS = 1.5 V 2.5 3.0 2 TC = 25 C 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.026 0.024 1200 1500 Ciss C - Capacitance (pF) Transfer Characteristics RDS(on) - On-Resistance () 0.022 0.020 0.018 0.016 0.014 0.012 Crss 900 VGS = 2.5 V 600 Coss 300 VGS = 4.5 V 0.010 0 6 12 18 24 30 0 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 8.3 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance VDS = 10 V 6 VDS = 16 V 4 1.4 1.6 ID = 8.3 A Capacitance VGS = 4.5 V, 2.5 V (Normalized) 1.2 1.0 2 0.8 0 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68925 S-82293-Rev. A, 22-Sep-08 www.vishay.com 3 New Product SI5432DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.050 ID = 8.3 A 0.040 R DS(on) - On-Resistance () I S - Source Current (A) TJ = 150 C 10 0.030 TJ = 25 C 0.020 TJ = 125 C TJ = 25 C 0.010 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.4 50 On-Resistance vs. Gate-to-Source Voltage 1.2 ID = 250 A 40 V GS(th) (V) 1.0 Power (W) 30 0.8 20 0.6 10 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 600 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 100 s 10 ID - Drain Current (A) 1 ms 1 Single Pulse Power 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68925 S-82293-Rev. A, 22-Sep-08 New Product SI5432DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 18 8 15 6 ID - Drain Current (A) 12 Power (W) 100 125 150 9 Package Limited 4 6 2 3 0 0 25 50 75 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68925 S-82293-Rev. A, 22-Sep-08 www.vishay.com 5 New Product SI5432DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68925. www.vishay.com 6 Document Number: 68925 S-82293-Rev. A, 22-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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