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| TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES * Package type: leaded * Package form: TO-18 * Dimensions (in mm): 4.7 * Peak wavelength: p = 950 nm * High reliability * High radiant power * High radiant intensity * Angle of half intensity: = 5 94 8483 * Low forward voltage * Suitable for high pulse current operation * Good spectral matching with Si photodetectors * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION TSTS7100 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. APPLICATIONS * Radiation source in near infrared range PRODUCT SUMMARY COMPONENT TSTS7100 Ie (mW/sr) > 10 (deg) 5 P (nm) 950 tr (ns) 800 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSTS7100 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 1000 pcs, 1000 pcs/bulk PACKAGE FORM TO-18 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Storage temperature range Thermal resistance junction/ambient Thermal resistance junction/case Note Tamb = 25 C, unless otherwise specified leads not soldered leads not soldered Tcase 25 C tp/T = 0.5, tp 100 s, Tcase 25 C tp 100 s Tcase 25 C TEST CONDITION SYMBOL VR IF IFM IFSM PV PV Tj Tstg RthJA RthJC VALUE 5 250 500 2.5 170 500 100 - 55 to + 100 450 150 UNIT V mA mA A mW mW C C K/W K/W www.vishay.com 260 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81047 Rev. 1.8, 04-Sep-08 TSTS7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 600 PV - Power Dissipation (mW) 500 400 300 200 R thJA 100 0 0 12790 300 IF - Forward Current (mA) R thJC 250 200 RthJC 150 100 50 0 25 50 75 100 125 94 8018 RthJA 0 20 40 60 80 100 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Breakdown voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Rise time Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A, tp/T = 0.01, tp 10 s TEST CONDITION IF = 100 mA, tp 20 ms IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 100 mA, tp 20 ms IF = 100 mA SYMBOL VF TKVF V(BR) Cj Ie e TKe p tr tr d 10 7 - 0.8 5 950 50 800 400 1.5 5 30 50 MIN. TYP. 1.3 - 1.3 MAX. 1.7 UNIT V mV/K V pF mW/sr mW %/K deg nm nm ns ns mm BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 10 1 10 4 10 3 10 2 10 1 10 0 10 -1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 7996 IF - Forward Current (A) I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 I F - Forward Current (mA) 0 1 2 3 4 94 8003 V F - Forward Voltage (V) Fig. 3 - Pulse Forward Current vs. Pulse Duration Document Number: 81047 Rev. 1.8, 04-Sep-08 Fig. 4 - Forward Current vs. Forward Voltage www.vishay.com 261 For technical questions, contact: emittertechsupport@vishay.com TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 1.2 VF rel - Relative Forward Voltage (V) 1.1 IF = 10 mA 1.0 0.9 1.6 1.2 Ie rel; e rel IF = 20 mA 0.8 0.8 0.7 0 20 40 60 80 100 0.4 0 - 10 0 10 94 7993 50 100 140 94 7990 Tamb - Ambient Temperature (C) T amb - Ambient Temperature (C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 I e - Radiant Intensity (mW/sr) 1.25 e rel - Relative Radiant Power 100 1.0 0.75 0.5 10 1 t p /T = 0.01 , t p = 20 s 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 0.25 IF = 100 mA 0 900 950 1000 94 8001 94 7994 - Wavelength (nm) Fig. 6 - Radiant Intensity vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength 0 10 20 30 100 I e rel - Relative Radiant Intensity 1000 e - Radiant Power (mW) 40 1.0 0.9 0.8 0.7 50 60 70 80 10 1 0.1 10 0 94 7977 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 8019 0.6 0.4 0.2 0 0.2 0.4 0.6 Fig. 7 - Radiant Power vs. Forward Current Fig. 10 - Relative Radiant Intensity vs. Angular Displacement www.vishay.com 262 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81047 Rev. 1.8, 04-Sep-08 TSTS7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs PACKAGE DIMENSIONS in millimeters A C 4.7 + 0.05 - 0.10 0.25 Chip position (2.5) 6.5 0.45 + 0.02 - 0.05 13.2 0.7 5.5 2.54 nom. 0.15 technical drawings according to DIN specifications Lens Drawing-No.: 6.503-5002.02-4 Issue: 1; 24.08.98 14486 3.9 0.05 Document Number: 81047 Rev. 1.8, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 263 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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