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 MJD32C
Low voltage PNP power transistor
Features

NPN type is MJD31C Surface-mounting TO-252 power package in tape & reel
Applications
3 1
DPAK TO-252
General purpose switching and amplifier
Description
The device is manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Figure 1.
Internal schematic diagram
Table 1.
Order code
Marking MJD32C Package DPAK Packaging Tape & reel
Part number MJD32CT4
June 2007
Rev 1
1/9
www.st.com 9
Electrical ratings
MJD32C
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-base voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature Value -100 -100 -5 -3 -5 -1 15 -65 to 150 150 Unit V V V A A A W C C
2/9
MJD32C
Electrical characteristics
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
Symbol ICES ICEO IEBO
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions VCE =-100V VCB =-60V VEB =-5V Min. Typ. Max. -20 -50 -0.1 Unit A A mA
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) VBE(on) (1) hFE Collector-emitter saturation voltage Base-emitter on voltage DC current gain
IC =-30mA
-100
V
IC =-3A IC =-3A IC =-1A IC = -3A
_ _
IB =-375mA VCE=-4V VCE =-4V VCE =-4V 25 10
-1.2 -1.8 50
V V
1. Note (1) Pulsed duration = 300 ms, duty cycle 1.5%
2.1
Electrical characteristic (curves)
Figure 2. Safe operating area Figure 3. Derating curve
3/9
Electrical characteristics Figure 4. DC current gain Figure 5. DC current gain
MJD32C
Figure 6.
Collector-emitter saturation voltage
Figure 7.
Base-emitter saturation voltage
Figure 8.
Collector-emitter on voltage
Figure 9.
Resistive load switching time
4/9
MJD32C Figure 10. Resistive load switching time
Electrical characteristics
2.2
Test circuits
Figure 11. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
5/9
Package mechanical data
MJD32C
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
6/9
MJD32C
Package mechanical data
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.8 0.024 0
o
0.039 0o
P032P_B
7/9
Revision history
MJD32C
4
Revision history
Table 4.
Date 25-Jun-2007
Revision history
Revision 1 Initial release. Changes
8/9
MJD32C
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
(c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
9/9


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Price & Availability of MJD32CT4
Newark

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onsemi Transistor, Aec-Q101, Pnp, 100V, To-252; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-100V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:15W; Dc Collector Current:-3A; Dc Current Gain Hfe:10Hfe; Transistor Case Rohs Compliant: Yes |Onsemi NJVMJD32CT4G 1000: USD0.258
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STMicroelectronics Bipolar Transistor, Pnp, -100V, To-252; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:100V; Transition Frequency Ft:-; Power Dissipation Pd:15W; Dc Collector Current:3A; Dc Current Gain Hfe:50Hfe; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics MJD32CT4 BuyNow
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RS

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