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SRFET AO4930 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor TM General Description The AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4930 is Pb-free (meets ROHS & Sony 259 specifications). Features FET1 VDS (V) = 30V ID = 9.5A RDS(ON) < 13.5m RDS(ON) < 16m FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8m (V GS = 10V) <23m (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 SRFET Soft Recovery MOSFET: Integrated Schottky Diode TM Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Max FET1 Parameter VDS 30 Drain-Source Voltage VGS Gate-Source Voltage 12 Continuous Drain Current A Pulsed Drain Current B Avalanche Current B B Max FET2 30 20 9.0 7.2 40 16 38 2 1.3 -55 to 150 Units V V A TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C 9.5 7.6 40 20 60 2 1.3 -55 to 150 A mJ W C Repetitive avalanche energy L=0.3mH Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 48 74 32 Max 62.5 90 40 Units C/W C/W C/W Symbol t 10s Steady-State Steady-State RJA RJL Typ 48 74 32 Max 62.5 90 40 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4930 FET1 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=9.5A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9.5A TJ=125C 1.5 40 11.2 16.8 13.2 78 0.38 0.5 5 1980 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 317 111 1.3 33 VGS=10V, VDS=15V, ID=9.5A 15.0 5.3 6.0 5.5 VGS=10V, V DS=15V, R L=1.6, RGEN=3 IF=9.5A, dI/dt=300A/s IF=9.5A, dI/dt=300A/s 5.5 27.0 4.3 11 7 13 2.0 43 nC nC nC ns ns ns ns ns nC 2376 13.5 21 16 1.8 Min 30 0.01 6 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of RJA is measured with the device in a still air environment with TA =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev0:Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4930 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 60 ID(A) 15 10 5 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 VGS=4.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=7A ID=9.5A VGS=10V VGS(Volts) Figure 2: Transfer Characteristics 125 40 VGS=3.5V 20 0 10V 4.5V ID (A) 6V 30 25 20 VDS=5V 25C DYNAMIC 16 14 RDS(ON) (m) 12 VGS=10V 10 8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON) (m) 20 15 10 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=9.5A 125C IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AO4930 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics 3000 2500 Capacitance (pF) VDS=15V ID=9.5A 2000 1500 1000 Crss 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss DYNAMIC PARAMETERS 100.0 10s 10.0 ID (Amps) 100s RDS(ON) limited 10s DC 0.1 TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) 10 100 10ms 1ms Power (W) 100 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 TJ(Max)=150C TA=25C 1.0 1s 0.0 0.01 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton T 10 100 1000 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4930 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1.0E-02 VDS=24V IR (A) 1.0E-03 VSD(V) VDS=12V 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode PARAMETERS Reverse Leakage Current vs. Junction Temperature 8 di/dt=800A/us 20 15 10 5 0 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 125C 20 Qrr (nC) 15 10 5 0 0 Qrr Irm 200 400 600 800 125 25C Is=20A 25C 10 9 8 7 Irm (A) 5 4 3 2 1 0 1000 trr (ns) 6 15 12 9 6 3 0 0 200 400 600 800 25C 125C S 18 125C 25C trr Is=20A 2.5 2 1.5 1 0.5 0 1000 S Qrr 125C Irm 25C 2 25C Irm (A) trr (ns) 4 125C 6 12 9 trr 6 3 0 0 5 10 15 20 25 30 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current S 25C 0.5 125C 0 0 25C 1 di/dt=800A/us 125C 2 1.5 15 0 50 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 2.5 50 IS=1A 10A 5A 20A DYNAMIC 25 Qrr (nC) 3 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt Alpha & Omega Semiconductor, Ltd. S AO4930 FET2 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=9A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=9A TJ=125C 1.4 40 13 18 18.6 23 0.75 1 3 955 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 145 112 0.5 17 VGS=10V, V DS=15V, ID=9A 9 3.4 4.7 5 VGS=10V, V DS=15V, R L=1.7, RGEN=3 IF=9A, dI/dt=100A/s IF=9A, dI/dt=100A/s 6 19 4.5 16.7 6.7 6.5 7.5 25 6 21 0.85 24 12 1250 15.8 22 23 1.7 Min 30 1 5 100 2.3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0:Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4930 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 45 40 35 30 ID (A) 3.5V ID(A) 25 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 25 Normalized On-Resistance VGS=4.5V RDS(ON) (m) 20 1.6 ID=9A 1.4 VGS=4.5V 1.2 ID=7A VGS=10V 0 1.5 2 2.5 VGS=3V 21 125C 14 10V 4.5V 4V 35 28 VDS=5V 13.4 7 25C 16 22 30.76 3.5 26 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 15 VGS=10V 1 10 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 1.0E+01 1.0E+00 RDS(ON) (m) 30 ID=9A IS (A) 125C 1.0E-01 125C 1.0E-02 25C 1.0E-03 1.0E-04 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4930 FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=9A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 Coss 13.4 22 16 26 30 15 20 25 0.76 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10s 100s 10.0 ID (Amps) RDS(ON) limited 10s DC TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) 10 100 1s 10ms 1ms Power (W) 100 90 80 70 60 50 40 30 20 10 0 0.0001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.001 TJ(Max)=150C TA=25C 1.0 0.1 0.0 0.01 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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