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TPCS8214
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
TPCS8214
Lithium Ion Battery Applications
* * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5m (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200A) Common drain Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 30 30 12 6 24 1.1 W 0.75 0.6 W 0.35 9.4 6 0.075 150 -55~150 mJ A mJ C C Unit V V V A
Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Drain power dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a)
JEDEC JEITA TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
1
2
3
4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
WARNING Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not noncombustibleUse a unit example PTC Thermistor, which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit,a large short-circuit current will flow continuously, which may cause the device to catch fire or smoke.
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TPCS8214
Thermal Characteristics
Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 C/W 167 Unit
Thermal resistance, channel to ambient (Note 2a) Single-device value at (t = 10 s) dual operation (Note 3b) Single-device operation (Note 3a)
208 C/W 357
Thermal resistance, channel to ambient (Note 2b) Single-device value at (t = 10 s) dual operation (Note 3b)
Marking (Note 6)
Part No. (or abbreviation code)
S8214
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: Please use devices on condition that the channel temperature is below 150C.Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
(a)
(b)
Note 3: a) b) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.)
Note 4: VDD = 24 V, Tch = 25C (initial), L = 0.2mH, RG = 25 , IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: on lower right of the marking indicates Pin 1. Weekly code: (Three digits)
Week of manufacture (01 for the first week of a year: Year of manufacture (The last digits of a year)
sequential number up to 52 or 53)
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TPCS8214
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 10 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 A VGS = 2.5 V, ID = 4.2 A Drain-source ON resistance RDS (ON) VGS = 4.0 V, ID = 4.8 A VGS = 4.5 V, ID = 4.8 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 5 V, ID = 6 A - |Yfs| Ciss Crss Coss tr ton 5V VGS 0V
4.7
Min

Typ.

Max
10
Unit
A A
10

30 15 0.5

V V
1.4 18.5 13.5 13

12.5 11 10.5 10 3240 285 315 21 33 15 66 42 7 14
m
VDS = 10 V, ID = 3.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz
5

S
pF
ID = 3 A
RL = 4.7
VOUT

ns

VDD 15 V - Duty < 1%, tw = 10 s =
nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition
Min

Typ.

Max 24
-1.2
Unit A V
IDR = 6 A, VGS = 0 V
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TPCS8214
ID - VDS
10 4.5 2.5 8 3.1 4 6 1.7 2 1.9 1.8 Common source Ta = 25C, Pulse test 16 20 2.5 3.1 4 4.5
ID - VDS
2 Common source Ta = 25C 1.9 Pulse test
(A)
ID
ID Drain current
(A)
12 1.8 8 1.7 4 1.6 VGS = 1.5 V
Drain current
4 1.6 2
VGS = 1.5 V
0 0
0.2
0.4
0.6
0.8
1.0
0 0
1
2
3
4
5
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
12 0.5
VDS - VGS
Common source
10
VDS = 10 V Pulse test
VDS (V)
Common source
Ta = 25C 0.4 Pulse test
(A) ID
8
6
Drain-source voltage
0.3
Drain current
0.2 ID = 1.5 A 0.1 6 3 12
4
25
2
100
Ta = -55C
0 0
1
2
3
0 0
2
4
6
8
10
12
Gate-source voltage VGS
(V)
Gate-source voltage VGS
(V)
|Yfs| - ID
100 Ta = -55C 25 100 100
RDS (ON) - ID
Common source 50 Ta = 25C Pulse test
50
Forward transfer admittance |Yfs| (S)
30
Drain-source ON resistance RDS (ON) (m)
30 VGS = 2.5 V 10 4 5 3 4.5 3.1
10
5 3 Common source VDS = 10 V Pulse test 1 0.1 0.3 0.5 1 3 5 10 30 50 100
1 0.1
0.3 0.5
1
3
5
10
30 50
100
Drain current ID (A)
Drain current ID (A)
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TPCS8214
RDS (ON) - Ta
30 100
IDR - VDS
(A)
50 30 10 5 3
Common source
Drain-source ON resistance RDS (ON) (m)
Pulse test ID = 6 A 20 1.5 VGS = 2.5 V 10 3.1 4 3
IDR Drain reverse current
10 5 3
1 1 0.5 0.3
0
VGS = -1 V
Common source Ta = 25C Pulse test
4.5
0 -80
-40
0
40
80
120
160
0.1 0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Ambient temperature Ta (C)
Drain-source voltage VDS
(V)
C - VDS
10000 2.0
Vth - Ta
Vth (V)
Ciss Common source VDS = 10 V 1.6 ID = 200 A Pulse test 1.2
(pF)
1000 Coss 100 Crss
Gate threshold voltage
Capacitance
C
0.8
10
0.4
Common source Ta = 25C VGS = 0 V f = 1 MHz 1 10 100
0 -80
-40
0
40
80
120
160
1 0.1
Ambient temperature Ta (C)
Drain-source voltage VDS
(V)
PD - Ta
1.2 (1)
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s
Dynamic input/output characteristics
30 6 VDD = 24 V
VDS (V)
Drain power dissipation PD (W)
1
0.8
(2) (3)
20
Drain-source voltage
VDS
VGS
4
0.6
12 10 6 6 VDD = 12, 24 V Common source ID = 6 A Ta = 25C, Pulse test 10 20 30 40 50 60 2
0.4
(4)
0.2
0 0
50
100
150
200
0 0
0 70
Ambient temperature Ta (C)
Total gate charge
Qg
(nC)
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Gate-source voltage
VGS
(V)
TPCS8214
rth - tw
1000
Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
(4) (3) (2) (1)
rth (C/W) Transient thermal impedance
100
50 30
10 5 3
1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width tw (s) Safe operating area
100 Single-device value at dual operation (Note 3b) ID max (Pulse) *
(A)
10 10 ms *
1 ms *
Drain current
ID
1
* Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1
VDSS max 10 100
Drain-source voltage VDS
(V)
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TPCS8214
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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