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SKM 313B010 Absolute Maximum Ratings Symbol Conditions Values Units Inverse diode SEMITRANSTM 3 Power MOSFET Modules SKM 313B010 Characteristics Symbol Conditions min. typ. max. Units Features Inverse diode Typical Applications Thermal characteristics Mechanical data MB 1 05-04-2005 SEN (c) by SEMIKRON SKM 313B010 Fig. 1 Rated power dissipation vs. temperature Fig. 2 Maximum safe operating area Fig. 3 Output characteristic Fig. 4 Transfer characteristic Fig. 5 On-resistance vs. temperature Fig. 6 Rated current vs. temperature 2 05-04-2005 SEN (c) by SEMIKRON SKM 313B010 Fig. 7 Breakdown voltage vs. temperature Fig. 8 Drain-source voltage derating Fig. 9 Capacitances vs. drain-source voltage Fig. 10 Gate charge characteristic 3 05-04-2005 SEN (c) by SEMIKRON SKM 313B010 UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 05-04-2005 SEN (c) by SEMIKRON |
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