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| 6MBI150U-170 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 1700V / 150A 6 in one-package Applications * Uninterruptible power supply * Inverter for Motor drive * AC and DC Servo drive amplifier * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1700 20 225 150 450 300 150 300 735 +150 -40 to +125 3400 Unit V V A Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 between thermistor and others *2 3.5 Screw Torque Mounting *3 4.5 Terminals *4 *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N*m(M5) *4 :Recommendable value : 3.5 to 4.5 N*m(M6) W C VAC N*m Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R Conditions VGE=0V, VCE=1700V VCE=0V, VGE=20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=900V IC=150A VGE=15V RG=4.7 VGE=0V IF=150A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.20 - 2.55 - 2.05 - 2.40 - 15 - 0.58 - 0.32 - 0.10 - 0.80 - 0.15 - 1.95 - 2.15 - 1.80 - 2.00 - 0.3 - 1.0 - 5000 465 495 3305 3375 Unit Max. 2.0 400 8.5 2.70 - 2.55 - - 1.20 0.60 - 1.50 0.30 2.70 - 2.55 - 0.60 - - 520 3450 mA nA V V Inverter Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Thermistor Reverse recovery time Lead resistance, terminal-chip* Resistance IF=150A T=25C T=100C T=25/50C s m B value B *4:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.025 Unit Max. 0.17 0.28 - C/W C/W C/W *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 6MBI150U-170 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 400 400 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 300 Collector current : Ic [A] VGE=20V 15V Collector current : Ic [A] VGE=20V 300 12V 15V 12V 200 200 100 10V 9V 100 10V 9V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 400 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip Collector - Emitter voltage : VCE [ V ] 300 Collector current : Ic [A] T j=25C 8 6 200 T j=125C 4 100 2 Ic=300A Ic=150A Ic=75A 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25C 1000.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=900V, Ic=150A, Tj= 25C Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 10.0 VGE 1.0 Cres Coes 0 0 200 400 VCE 600 800 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 6MBI150U-170 Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=4.7, Tj= 25C 10000 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=4.7, Tj=125C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 toff ton tr 1000 toff ton tr tf 100 tf 100 10 0 100 200 300 Collector current : Ic [ A ] 10 0 100 200 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=150A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 80 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=15V, Rg=4.7 Eoff(125C) 70 60 50 40 30 20 10 0 Eoff(25C) Switching time : ton, tr, toff, tf [ nsec ] 1000 toff ton tr tf Eon(125C) Err(125C) Err(25C) Eon(25C) 100 10 1 10 Gate resistance : Rg [ ] 100 0 50 100 150 200 250 300 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=150A, VGE=15V, Tj= 125C Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 4.7 ,Tj <= 125C Stray inductance <= 100nH 100 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon Collector current : Ic [ A ] 100 450 300 50 Eoff 150 Err 0 1 10 Gate resistance : Rg [ ] 0 0 300 600 900 1200 1500 1800 Collector - Emitter voltage : VCE [ V ] 6MBI150U-170 Forward current vs. Forward on voltage (typ.) chip 400 1000 IGBT Module Reverse recovery characteristics (typ.) Vcc=900V, VGE=15V, Rg=4.7 Forward current : IF [ A ] 300 T j=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr (125C) trr (25C) Irr (125C) Irr (25C) 100 200 T j=125C 100 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 100 200 300 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 FWD Thermal resistanse : Rth(j-c) [ C/W ] 100 Temperature characteristic (typ.) 0.100 IGBT Resistance : R [ k ] 10 0.010 1 0.001 0.001 0.010 0.100 1.000 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T emperature [C ] Pulse width : Pw [ sec ] 6MBI150U-170 Outline Drawings, mm M629 IGBT Module Equivalent Circuit Schematic [Inverter] 2 4 6 [Thermister] 11 12 9 10 7 8 1 3 5 |
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