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2SK3904
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)
2SK3904
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.2 (typ.) High forward transfer admittance: Yfs = 9.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 19 76 150 820 19 15 150 -55~150 Unit V V V A W mJ A mJ C C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-65 2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
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Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C, L = 3.79 mH, RG = 25 , IAR = 19 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care.
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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf ID = 9.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 9.5 A VDS = 10 V, ID = 9.5 A Min 30 450 2.0 2.6 Typ. 0.2 9.5 3100 20 270 70 Max 10 100 4.0 0.26 pF Unit A V A V V S
10 V VGS 0V 50

ns
VOUT
Turn-on time Switching time Fall time
RL = 21
130
VDD 200 V -
70

nC
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge
toff
Duty < 1%, tw = 10 s =
280
Qg Qgs Qgd VDD 360 V, VGS = 10 V, ID = 19 A -

62 40 22
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 19 A, VGS = 0 V IDR = 19 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1300 18 Max 19 76 -1.7 Unit A A V s C
Marking
TOSHIBA
K3904
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3904
ID - VDS
10
COMMON SOURCE Tc = 25C PULSE TEST 10
ID - VDS
20
10 8.0 6.75 6.5 COMMON SOURCE Tc = 25C PULSE TEST
8.0
6.0
DRAIN CURRENT ID (A)
8
DRAIN CURRENT ID (A)
16
5.75
6.25
6
5.5
12
6.0
4
5.25 5.0
8
5.75 5.5
2
VGS = 4.5 V
4
VGS = 5.0 V
0 0 1 2 3 4 5
0 0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
50
VDS - VGS
10
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE VDS = 20 V PULSE TEST
DRAIN CURRENT ID (A)
40
25
8
COMMON SOURCE Tc = 25C PULSE TEST
30
6
ID = 19 A
20
4
8.5
10
100 Tc = -55C
2
4.0
0 0 2 4 6 8 10 12 14
0 0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
Yfs - ID
100
FORWARD TRANSFER ADMITTANCE Yfs (S)
COMMON SOURCE VDS = 20 V PULSE TEST
1
RDS (ON) - ID
COMMON SOURCE Tc = 25C PULSE TEST
Tc = -55C
25 100
10
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
VGS = 10,15 V
1 1 10
DRAIN CURRENT ID (A)
0.1
100
1
10
100
DRAIN CURRENT ID (A)
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2SK3904
RDS (ON) - Tc
1
IDR - VDS
100
0.8
DRAIN REVERSE CURRENT IDR (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE VGS = 10 V PULSE TEST
COMMON SOURCE Tc = 25C PULSE TEST
10
0.6
0.4
ID = 19 A 4 9.5
10
1
5 3 1
0.1 0.0 -0.2 -0.4 -0.6
0.2
VGS = 0, -1 V
-0.8 -1.0 -1.2
0 -80 -40 0 40 80 120 160
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE - VDS
Vth (V)
10000
5
Vth - Tc
COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST
(pF)
4
CAPACITANCE C
1000
GATE THRESHOLD VOLTAGE
3
2
100 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 10 100
1
0 -80 -40 0 40 80 120 160
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE
Tc (C)
PD - Tc
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500
PD (W)
DRAIN-SOURCE VOLTAGE VDS (V)
400
DRAIN POWER DISSIPATION
VDS
16
120
300
VDS = 90 V 360 180
12
80
200
VGS
8
40
100
4
0 0
40
80
120
160
200
0 0 20 40 60 80 100
0
TOTAL GATE CHARGE Qg (nC)
CASE TEMPERATURE
Tc
(C)
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GATE-SOURCE VOLTAGE VGS
160
COMMON SOURCE ID = 19 A Tc = 25C PULSE TEST
20
(V)
2SK3904
rth - tw
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-a)
1
Duty = 0.5 0.2
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE PDM t T Duty = t/T Rth (ch-c) = 0.833C/W
0.01
0.001 10
100
1m
10 m
100 m
1
10
PULSE WIDTH tw
(S)
SAFE OPERATING AREA
100
EAS - Tch
1000
100 s *
AVALANCHE ENERGY EAS (mJ)
ID max (PULSED) *
800
DRAIN CURRENT ID (A)
10
1 ms * ID max (CONTINUOUS)
600
1
DC OPERATION Tc = 25C
400
200
0.1
* SINGLE NONPETITIVE PULSE Tc = 25C Curves must be derated linearly with
0.01 1
0
VDSS max
1000
increase in temperature.
10
25
50
75
100
125
150
100
CHANNEL TEMPERATURE (INITIAL)
Tch (C)
DRAIN-SOURCE VOLTAGE VDS (V)
15 V -15 V
BVDSS IAR VDD VDS
TEST CIRCUIT RG = 25 VDD = 90 V, L = 3.79 mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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