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| Composite Transistors XN4502 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 q 2SD602A x 2 elements 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 60 50 5 0.5 1 300 150 -55 to +150 Unit V V V A A mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 5Q Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IC = 150mA* VCE = 10V, IC = 500mA* IC = 300mA, IB = 30mA* VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 85 40 0.35 200 6 15 0.6 V MHz pF min 60 50 5 0.1 340 typ max Unit V V V A 0 to 0.05 0.1 to 0.3 0.8 * Pulse measurement 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features 0.5 -0.05 +0.1 +0.1 1 Composite Transistors PT -- Ta 500 800 700 XN4502 IC -- VCE Ta=25C IB=10mA IC -- I B 800 700 VCE=10V Ta=25C Total power dissipation PT (mW) Collector current IC (mA) 600 500 400 300 200 100 Collector current IC (mA) 20 400 300 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 600 500 400 300 200 100 0 200 100 0 0 40 80 120 160 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC 100 VBE(sat) -- IC IC/IB=10 100 IC/IB=10 300 hFE -- IC VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Forward current transfer ratio hFE 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C Base to emitter saturation voltage VBE(sat) (V) 250 Ta=75C 200 25C -25C 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 240 12 Cob -- VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB=10V Ta=25C f=1MHz IE=0 Ta=25C 120 VCER -- RBE IC=2mA Ta=25C 100 Transition frequency fT (MHz) 200 10 160 8 80 120 6 60 80 4 40 40 2 20 0 -1 0 -2 -3 -5 -10 -20 -30 -50 -100 1 2 3 5 10 20 30 50 100 0 1 3 10 30 100 300 1000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 |
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