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| VUB 71 Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM V 1200 1600 VUB 71-12 NO1 VUB 71-16 NO1 Type VRRM = 1200-1600 V IdAVM = 70 A 12 45 6 Symbol VRRM IdAV IdAVM IFSM I2t Test Conditions Maximum Ratings 1200 / 1600 59 70 530 475 1400 1130 90 1200 20 43 29 90 160 1200 9 14 90 75 60 40 -40...+150 150 -40...+125 Module 50/60 Hz IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 unf) 3000 3600 2-2.5 18-22 35 V A A A A A A W Applications VCES VGE IGBT IC25 IC80 ICM Ptot Fast Recovery Diode VRRM IFAV IFRMS IFRM IFSM TVJ = 25 C to 150 C Continuous TH = 25 C, DC TH = 80 C, DC tp = Pulse width limited by TVJM V V A A A W V A A A A A W C C C V~ V~ Nm lb.in. g Features 7 9 10 Rectifier Diodes TH = 110 C, sinusoidal 120 limited by leads TVJ = 45 C, t = 10 ms, VR = 0 V TVJ = 150 C, t = 10 ms, VR = 0 V TVJ = 45 C, t = 10 ms, VR = 0 V TVJ = 150 C, t = 10 ms, VR = 0V TH = 25 C per diode Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast freewheeling diode Convenient package outline UL registered E 72873 Thermistor Ptot Drive Inverters with brake system Advantages 2 functions in one package No external isolation neccessary Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability Dimensions in mm (1 mm = 0.0394") TH = 80 C TH = 80 C, rectangular d = 0.5 TH = 80 C, rectangular d = 0.5 TH = 80 C, tP = 10 s, f = 5 kHz TVJ = 45 C, t = 10 ms TVJ = 150 C, t = 10 ms TH = 25 C Ptot TVJ TVJM Tstg VISOL Md Weight Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 749 VUB 71 Symbol Test Conditions Characteristic Values (TVJ = 25 C, unless otherwise specified) min. typ. max. 0.1 3 1.3 mA mA V VF VT0 rT RthJH VBR(CES) VGE(th) IGES ICES VCEsat Rectifier Diodes Rectifier Diodes IR VR = VRRM, VR = VRRM, IF = 25 A, TVJ = 25 C TVJ = 150 C TVJ = 25 C For power-loss calculations only TVJ = 150 C per diode VGS = 0 V, I C = 3 mA IC = 10 mA VGE = 20 V 1200 5 0.85 V 8.5 m 1.42 K/W V V nA A mA V s 8 500 700 1.5 2.9 10 TVJ = 25 C, VCE = VCES TVJ = 125 C, VCE = 0.8 VCES VGE = 15 V, IC = 25 A IGBT VGE = 15 V, VCE = 600 V, TVJ = 125 C, RG = 22 , non repetitive VGE = 15 V, VCE = 800 V, TVJ = 125 C, RG = 22 , Clamped Inductive load, L = 100 H VCE = 25 V, f = 1 MHz, VGE = 0 V VCE = 600 V, IC = 25 A VGE = 15 V, RG = 22 Inductive load; L = 100 H TVJ = 125 C 4.5 300 350 1600 6 8 tSC (SCSOA) RBSOA 50 A Cies td(on) td(off) tfi Eon Eoff RthJH IR VF VT0 rT IRM trr RthJH R25 dS dA a Module NTC nF ns ns ns mJ mJ 0.8 K/W VR VR Fast Recovery Diode IF = VRRM, TVJ = 25 C = 800 V, TVJ =150 C = 12 A, TVJ = 25 C 4 0.2 6 2.7 mA mA V For power-loss calculations only TVJ = 150 C IF VR IF VR = 25 A, -diF/dt = 100 A/ s = 100 V = 1 A, = 30 V -diF/dt = 100 A/ s 6.5 1.65 V 46 m 7 A 50 70 ns 3.12 K/W Siemens Typ S 891/2,2k/+9 Creep distance on surface Strike distance in air Maximum allowable acceleration 2,2 k 12.7 mm 9.4 mm 50 m/s2 749 (c) 2000 IXYS All rights reserved 2-2 |
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