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| SUR50N025-05P New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 FEATURES ID (A)a, e 89 80 rDS(on) (W) 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V Qg (Typ) 30 nC D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion, Low-Side - Desktop PC - Notebook PC TO-252 Reverse Lead DPAK D Drain Connected to Tab G D S G Top View Ordering Information: SUR50N025-05P--E3 (Lead (Pb)-Free) SUR50N025-05P-T4--E3 (Lead (Pb)-Free, alternate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Drain Diode Current Source-Drain Avalanche Current Pulse Single Pulse Avalanche Energy TC = 25_C TA = 25_C L = 0 1 mH 0.1 TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 25 "20 89a, e 75a, e 36b, c 30b, c 100 55 7.7b, c 45 101 83a 58a 11.5b, c 8.0b, c -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t p 10 sec Steady State Symbol RthJA RthJC Typical 10 1.5 Maximum 13 1.8 Unit _C/W Notes: a. Based on TC = 25_C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 90 _C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 73379 s-50933--Rev. A, 09-May-05 www.vishay.com 1 SUR50N025-05P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 15 A 50 0.0042 0.0062 65 0.0052 0.0076 1.4 25 20 -6.0 2.4 "100 1 10 V mV/_C V nA mA A W S Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 12 V, RL = 0.24 W ID ^ 50 A, VGEN = 10 V, Rg = 1 W VDD = 12 V, RL = 0.24 W ID ^ 50 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz 0.5 VDS = 12 V, VGS = 10 V, ID = 50 A VDS = 12 V, VGS = 4.5 V, ID= 50 A VDS = 12 V, VGS = 0 V, f = 1 MHz 3600 790 430 63 30 10.5 10.5 1.0 24 13 24 7.5 11 11 29 8 1.5 36 20 36 12 17 17 44 12 ns W 95 45 nC pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73379 s-50933--Rev. A, 09-May-05 IS ISM VSD trr Qrr ta tb IF = 20 A, di/dt = 100 A/ms, TJ = 25_C A A/ms IS = 30 A 0.9 34 25 17 17 TC = 25_C 55 100 1.5 51 38 A V ns nC ns 2 SUR50N025-05P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 100 Vishay Siliconix Output Characteristics VGS = 10 thru 5 V 4V I D - Drain Current (A) 20 Transfer Characteristics I D - Drain Current (A) 80 16 60 12 40 8 TC = 125_C 4 25_C -55_C 0 1.0 20 2V 0 0.0 3V 0.4 0.8 1.2 1.6 2.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 0.012 0.010 0.008 On-Resistance vs. Drain Current and Gate Voltage 4800 4000 C - Capacitance (pF) 3200 2400 1600 Capacitance rDS(on) - On-Resistance (mW) Ciss VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 0.000 0 20 40 60 80 100 Coss 800 0 0 Crss 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) Gate Charge 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature ID = 20 A VGS = 10 V VGS = 4.5 V 8 VDS = 12 V VDS = 18 V 4 6 2 0 0 8 16 24 32 40 48 56 64 Qg - Total Gate Charge (nC) Document Number: 73379 s-50933--Rev. A, 09-May-05 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 3 SUR50N025-05P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 100 rDS(on) - Drain-to-Source On-Resistance (W) TJ = 150_C 0.030 0.025 0.020 0.015 0.010 0.005 0.000 0.2 0.4 0.6 0.8 1.0 1.2 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) ID = 20 A On-Resistance vs. Gate-to-Source Voltage 10 I S - Source Current (A) 1 0.1 TJ = 25_C 0.01 TJ = 125_C TJ = 25_C 0.001 0.00 Threshold Voltage 0.6 0.3 ID = 250 mA 0.0 Power (W) VGS(th) (V) -0.3 -0.6 -0.9 -1.2 -50 480 720 600 Single Pulse Power, Junction-to-Ambient TA = 25_C 360 240 120 -25 0 25 50 75 100 125 150 175 0 0.001 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) 1000 Safe Operating Area, Junction-to-Case *Limited by rDS(on) 100 I D - Drain Current (A) 10 ms 100 ms 10 1 ms 10 ms 1 TC = 25_C Single Pulse 0.1 0.1 1 10 100 ms, dc 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73379 s-50933--Rev. A, 09-May-05 SUR50N025-05P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 100 Vishay Siliconix Current De-Rating* 90 75 60 Power De-Rating 80 ID - Drain Current (A) 60 Power 45 30 15 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 40 Package Limited 20 0 TC - Case Temperature (_C) TC - Case Temperature (_C) 1000 Single Pulse Avalanche Capability IC - Peak Avalanche Current (A) 100 10 1 TA + 0.1 0.00001 BV * V DD L @ ID 0.0001 0.001 0.01 0.1 1 TA - Time In Avalanche (sec) *The power dissipation PD is based on TJ(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73379 s-50933--Rev. A, 09-May-05 www.vishay.com 5 SUR50N025-05P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 0.01 10-4 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73379. www.vishay.com Document Number: 73379 s-50933--Rev. A, 09-May-05 6 |
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