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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF24N50/3 SFF24N50/3T 24 AMP / 500 Volts 0.2 N-Channel Power MOSFET TO-3 DESIGNER'S DATA SHEET Features: * * * * * * * * * * Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IXTH24N50 Types Maximum Ratings Drain - Source Voltage Gate - Source Voltage Continuous Drain Current (Tj limited) Avalanche Current Avalanche Energy Operating & Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC=25C Total Device Dissipation @ TC=55C Package Outline: TO-3 Pin Out: Pin 1: GATE Pin 2: SOURCE Pin 3: DRAIN Notes: 1. P/N: SFF 24N50/3: Pin Diameter : 0.043" 0.038" 2. P/N: SFF24N50/3T: Pin Diameter: 0.063" 0.058" O.875 MAX 2x O.165 .151 SEATING PLANE Symbol VDS VGS ID Repetitive Repetitive Single Pulse IAR EAR EAS Top & Tstg RJC PD Value 500 20 24 21 1 690 -55 to +150 0.75 (typ 0.6) 167 126 .675 .655 Units Volts Volts Amps Amps mJ C C/W WATTS .135 MAX .525 MAX 2x R.188 MAX 2x .043 .038 .440 .420 2 2x .225 .205 1 .450 .250 2x .312 MIN 1.197 1.177 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00175E DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF24N50/3 SFF24N50/3T Symbol BVDSS RDS(on) ID(on) VGS(th) gfs IDSS Electrical Characteristics @ T J = 25C (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 A) Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID) On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V) Gate Threshold Voltage (VDS=VGS, ID= 4mA) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125C) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25C) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=25C IF=10A Di/dt=100A/sec VGS=0 Volts VDS=25 Volts f=1 MHz At rated VGS VGS=10 Volts 50% rated VDS 50% Rated ID VDD=50% Rated VDS 50% Rated ID RG= 6.2 VGS=10 Volts Min 500 -- 24 2.0 8 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 12 -- -- -- -- 135 28 62 16 33 65 30 -- -- -- 4200 450 135 Max -- 0.2 -- 4.0 -- 250 1000 +100 -100 180 40 85 30 45 130 40 1.5 500 -- -- -- -- Units Volts A V mho A IGSS Qg Qgs Qgd td(on) nA nC tr td(off) tf nsec VSD trr QRR Ciss Coss Crss V nsec nC pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00175E DOC |
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