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| SHINDENGEN Super Fast Recovery Rectifiers Single SF5L30 300V 5A FEATURES *oe trr30ns OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) *oe Fully Isolated Molding *oe Dielectric strength 2kV guaranteed APPLICATION *oe Switching power supply *oe Free Wheel *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 300 V Average Rectified Forward Current 50Hz sine wave, R-load, Tc=130*Z IO 5 A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 *Z A 60 Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque Nm TOR (Recommended torque : 0.3Nm*j 0.5 *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Forward Voltage V IF =5A, Pulse measurement F Reverse Current IR V=V , Pulse measurement R RM Reverse Recovery Time =0.5A,R I =1A trr IF Junction Capacitance Cj f=1MHz,R V =10V Thermal Resistance AEjc junction to case Ratings Unit Max.1.3 V Max.25 EA Max.30 ns TYP 50 pF Max.3.4 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF5L30 Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement 0.1 0 0.4 0.8 1.2 1.6 2 2.4 Forward Voltage VF [V] SF5L30 10 Forward Power Dissipation Forward Power Dissipation PF [W] DC 8 D=0.8 0.5 6 0.3 0.2 4 0.05 2 0.1 SIN 0 0 1 2 3 4 5 6 7 8 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T SF5L30 150 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SF5L30 10 Derating Curve Average Rectified Forward Current IO [A] 8 DC D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = VRM 0 0 IO VR tp D=tp /T T SF5L30 Junction Capacitance f=1MHz Tc=25C TYP per diode 100 Junction Capacitance Cj [pF] 10 1 1 10 100 Reverse Voltage VR [V] |
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