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| Semiconductor SDB110Q Schottky Barrier Diode Features * Low power rectified * Silicon epitaxial type * Battery changing diode Ordering Information Type No. SDB110Q Marking S3 Package Code SOD-523 Outline Dimensions unit : mm 0.2 Min. 1.60.1 1.20.1 0.80.1 2 1 1 2 0.60.1 0~0.1 PIN Connections 1. Anode 2. Cathode KSD-E009-001 1 SDB110Q Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Junction temperature Storage temperature (Ta=25 C) Symbol VR IFRM IF Tj Tstg * Ratings 10 0.5 30 150 -55 ~ 150 Unit V A mA C C * : = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit ratingx1.5 Electrical Characteristics Characteristic Forward voltage 1 Forward voltage 2 Reverse current ESD-Capability (Ta=25 C) Test Condition IF =1mA IF =10mA VR =5V C=200pF, RL=100 Both forward reverse direction 5 pulse Symbol VF(1) VF(2) IR - Min. 0.1 225 Typ. - Max. 0.3 0.35 0.5 Unit V V A V KSD-E009-001 2 SDB110Q Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR KSD-E009-001 3 |
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