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| SHINDENGEN 3 Phase Bridge Diode Diode Module S20VT80 800V 20A FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate OUTLINE DIMENSIONS Case : 2F: SVT Case (Unit : mm) (VTA type) APPLICATION Big Power Supply Air conditioner Factory Automation, Inverter RATINGS Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load, With heatsink, Tc=128 IO Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque Ratings -40150 150 800 20 300 300 2 0.8 Unit V A A A2s kV Nm IFSM 2 50Hz sine wave, Non-repetitive 1cycle peak value, Rating of per diode, Tj=25 I t 1mst10msc=25 Vdis Terminals to case, AC 1 minute TOR Recommended torque : 0.6Nm Electrical Characteristics (If not specified Tc=25) Item Symbol Conditions Forward Voltage Pulse measurement, Rating of per diode VF IF=7A, Reverse Current Thermal Resistance Ratings Max.1.05 Max.10 Unit V A IR jc VR=VRM, Pulse measurement, Rating of per diode junction to case Max.0.55 /W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S20VTx 100 Forward Voltage 10 Forward Current IF [A] Tc=150C [TYP] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage VF [V] S20VTx 80 Forward Power Dissipation Forward Power Dissipation PF [W] 60 40 20 0 0 5 10 15 20 25 30 35 Average Rectified Forward Current IO [A] Tj= 150C Sine wave S20VTx 80 Forward Power Dissipation Forward Power Dissipation PF [W] 60 40 20 0 0 5 10 15 20 25 30 35 Average Rectified Forward Current IO [A] Tj= 150C Sine wave S20VTx Peak Surge Forward Capability IFSM 400 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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