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NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch
Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12C/W Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product fT IE = -100mA, VCE = 10V, f = 1MHz - 7 - MHz hFE VCE(sat) IC = 200mA, VCE = 10V IC = 500mA, IB = 50mA 30 - - - - 5 V V(BR)CEO ICBO IEBO IC = 10mA, IB = 0 VCB = 800V VEB = 6V, IC = 0 400 - - - - - - 100 100 V mA mA Symbol Test Conditions Min Typ Max Unit
.485 (12.3) Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.360 (9.14) Min Base
.960 (24.3) .580 (14.7)
.147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max
Collector/Case
Emitter

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Price & Availability of NTE369

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE369 31C3981	NTE Electronics Inc	Transistor, bjt, npn,400V V(Br)Ceo,2.1A I(C),to-66 \|Nte Electronics NTE369		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE369	NTE Electronics Inc	Transistor NPN Silicon 800V IC=3A TO=66 Case Vertical Deflection Switch	1000: USD7.85 500: USD8.07 250: USD8.3 100: USD8.81 50: USD9.23 25: USD9.38 5: USD11.4	6

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE369	NTE Electronics Inc		1: USD9	3
NTE369	NTE Electronics Inc			3

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE369	NTE Electronics Inc	POWER BIPOLAR TRANSISTOR, 1A I(C), 400V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-66, METAL, 2 PIN	5: USD8.8088 1: USD11.745	20
NTE369	NTE Electronics Inc	POWER BIPOLAR TRANSISTOR, 1A I(C), 400V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-66, METAL, 2 PIN	3: USD10.7751 1: USD11.5448	2
NTE369	NTE Electronics Inc	POWER BIPOLAR TRANSISTOR, 1A I(C), 400V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-66, METAL, 2 PIN	1: USD12	2

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE369 NTE369	NTE Electronics Inc	Transistor: NPN; bipolar; 800V; 3A; 40W; TO66	25: USD8.72 10: USD9.7 3: USD11 1: USD12.2	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE369	NTE Electronics Inc	Transistor NPN Silicon 800V IC=3A TO=66 Case Vertical Deflection Switch	1000: USD7.85 500: USD8.07 250: USD8.3 100: USD8.81 50: USD9.23 25: USD9.38 5: USD11.4	6

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