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NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch
Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Characteristics Turn-On Time Storage Time Fall Time ton tstg tf VCC = 30V, IB1 = -IB2 = 6mA, Duty Cycle 1% - - - 0.2 1.5 0.6 - - - s s s Symbol ICBO IEBO hFE (1) hFE (2) VBE(sat) Test Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 3A IC = 3A, IB = 6mA Min - - 80 2000 1000 - - Typ - - - - - - - Max 20 2.5 - - - 1.5 2.0 V V Unit A mA V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
VCE(sat) IC = 3A, IB = 6mA
C B ]4.5k ]300 E B ]4.5k ]300
C
E
.343 (8.72) .059 (1.5)
.148 (3.72) .256 (6.5) .043 (1.1)
.406 (10.3)
.043 (1.1) .413 (10.5) .032 (0.82)
.100 (2.54)
.020 (.508)
B
C
E

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Price & Availability of NTE2352

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2352 2368-NTE2352-ND	NTE Electronics Inc	TRANS PNP DARL 80V 4A 3SIP	100: USD3.85 50: USD3.94 20: USD4.18 10: USD4.41 1: USD4.64	64

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2352	NTE Electronics Inc	Transistor PNP Silicon Darlington 100V IC=4A N-pack Case tf=0.4us Complement To NTE2351	5000: USD3.42 2500: USD3.57 1000: USD3.66 500: USD3.71 250: USD3.94 100: USD4.14 50: USD4.2 5: USD5.32	7

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2352	NTE Electronics Inc		2: USD3	5

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2352	NTE Electronics Inc	SMALL SIGNAL BIPOLAR TRANSISTOR, 4A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON	2: USD5.775 1: USD8.6625	1
NTE2352	NTE Electronics Inc	SMALL SIGNAL BIPOLAR TRANSISTOR, 4A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON	2: USD3 1: USD4	4

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2352 NTE2352	NTE Electronics Inc	Transistor: PNP; bipolar; Darlington; 80V; 4A; 1W	10: USD4.34 3: USD4.91 1: USD5.46	18

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2352	NTE Electronics Inc	Transistor PNP Silicon Darlington 100V IC=4A N-pack Case tf=0.4us Complement To NTE2351	5000: USD3.42 2500: USD3.57 1000: USD3.66 500: USD3.71 250: USD3.94 100: USD4.14 50: USD4.2 5: USD5.32	7

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